ATOMIC-STRUCTURE OF GE-RELATED POINT-DEFECTS IN GE-INCORPORATED OXIDE-FILMS

Germanium-incorported oxides formed by high pressure wet oxidation of Si90Ge10 substrates are examined using electron paramagnetic resonance spectroscopy. Simulations based on the g tensor for the Ge E' center suggest that the dominant defect observed in annealed 10 Mrad irradiat ed samples is an oxygen vacancy at a site of a substitutional Ge atom. Comparison of thin film and bulk samples suggests that the centers fo und in the films are associated with hydrogen. The results presented h ere should be directly applicable to optical components fabricated on semiconductor substrates for photon integrated circuits.