MEASUREMENT OF ION-INDUCED DAMAGE-PROFILES IN GAAS

In this study, with the use of a sensitive optical technique, we demon strate the possibility of measuring the depth distribution of damage i n GaAs that is generated by various ion-assisted processes such as ion implantation and ion assisted plasma etching. We have used this techn ique to measure the depth distribution of damage in both He and Ar imp lanted GaAs and in inert gas and reactive ion etched GaAs. The sensiti vity of the technique allowed us to measure damage profiles over a lar ge range of ion energies and ion doses. We have also confirmed previou sly published results indicating that damage created by sputter etchin g is inversely proportional to the mass of the ions used in the etchin g process.