TEMPERATURE-DEPENDENCE OF AUGER LIFETIME IN HEAVILY-DOPED HG1-XCDXTE

Authors
DE SS GHOSH AK HALDER JC BERA M HAZRA AK
Citation
Ss. De et al., TEMPERATURE-DEPENDENCE OF AUGER LIFETIME IN HEAVILY-DOPED HG1-XCDXTE, Journal of applied physics, 74(11), 1993, pp. 6642-6644
Citations number
33
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
11
Year of publication
1993
Pages
6642 - 6644
Database
ISI
SICI code
0021-8979(1993)74:11<6642:TOALIH>2.0.ZU;2-9
Abstract
An expression for Auger lifetime as a function of temperature has been derived for a heavily doped Hg1-xCdxTe in the presence of a nonparabo licity of band structure, band gap narrowing, and carrier degeneracy. It is utilized to study the variation of Auger lifetime with temperatu re through numerical analysis.