INVESTIGATION OF COMPENSATION DEFECTS IN CDTE-CL SAMPLES GROWN BY DIFFERENT TECHNIQUES

A detailed analysis of the photoinduced current transients of differen tly grown CdTe:Cl samples was performed in the 100-140 K range in orde r to investigate the influence of different growth techniques (sublima tion, Bridgman method, and traveling heater method) on compensation de fects. While studying the experimental results the analysis of the tra nsients turned out to be a crucial point. With the conventional two-ga te technique only one trap with misleading trap parameters could be id entified in each sample. Analyzing the transients with the regularizat ion method proposed recently [C. Eiche, D. Maier, M. Schneider, D. Sin erius, J. Weese, K. W. Benz, and J. Honerkamp, J. Phys. Condens. Matte r 4, 6131 (1992)], three traps could be identified in each sample. Onl y one of these traps leads to an activation energy and a cross section approximately the same for the different samples. The other two traps of each sample depend on the growth technique.