RAMAN-SCATTERING FROM IN1-XALXSB METASTABLE EPILAYERS

Raman scattering has been used to investigate the optical phonons in t hick compositionally uniform epilayers of In1-xAlxSb (x < 0.65) grown by magnetron sputter epitaxy on (001)InSb. An analysis of the stress-i nduced changes in the frequencies of the two optical phonon modes foun d in the epilayers was performed, and the stress factors and phonon mo de behaviors for bulk material were evaluated. It was found that some epilayers with low x values were coherently strained, even though thei r thicknesses far exceeded the mechanical-equilibrium critical thickne ss limit.