THE STRUCTURAL HOMOGENEITY OF BORON-CARBIDE THIN-FILMS FABRICATED USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM B5H9+CH4

Authors
LEE SW MAZUROWSKI J OBRIEN WL DONG QY JIA JJ CALLCOTT TA TAN YX MIYANO KE EDERER DL MUELLER DR DOWBEN PA
Citation
Sw. Lee et al., THE STRUCTURAL HOMOGENEITY OF BORON-CARBIDE THIN-FILMS FABRICATED USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM B5H9+CH4, Journal of applied physics, 74(11), 1993, pp. 6919-6924
Citations number
42
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
11
Year of publication
1993
Pages
6919 - 6924
Database
ISI
SICI code
0021-8979(1993)74:11<6919:TSHOBT>2.0.ZU;2-P
Abstract
Boron carbide thin films of several B/C ratios have been deposited on Si(111) using plasma-enhanced chemical vapor deposition from nido-pent aborane(9) (B5H9) and methane (CH4) . X-ray diffraction studies of bor on carbide thin films on Si (111) exhibited characteristic microcrysta lline diffraction lines. Soft x-ray emission spectroscopy was used to verify that the local electronic structure and composition of each sam ple corresponded to a homogeneous solid solution boron carbide phase.