NEUTRON-SCATTERING INVESTIGATION OF THE STRUCTURE OF SEMICONDUCTOR-DOPED GLASSES

A small-angle neutron scattering (SANS) study of the structure of II-V I semiconductor crystallites in a semiconductor-doped glass is present ed. The scattered intensity I(k) exhibits a peak at a nonzero scatteri ng vector and decreases to zero as k goes to zero. The data are interp reted with a simple phenomenological model, based on local mass conser vation, which describes a dilute ps of crystallites- surrounded by dep letion zones. We show that SANS allows a quick and accurate measuremen t of the average size and of the volume fraction of the crystallites, and we give values of both quantities for a commercial series of glass es.