A 1.9 EV PHOTOLUMINESCENCE INDUCED BY 4 EV PHOTONS IN HIGH-PURITY WETSYNTHETIC SILICA

Authors
ANEDDA A BONGIOVANNI G CANNAS M CONGIU F MURA A MARTINI M
Citation
A. Anedda et al., A 1.9 EV PHOTOLUMINESCENCE INDUCED BY 4 EV PHOTONS IN HIGH-PURITY WETSYNTHETIC SILICA, Journal of applied physics, 74(11), 1993, pp. 6993-6995
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
11
Year of publication
1993
Pages
6993 - 6995
Database
ISI
SICI code
0021-8979(1993)74:11<6993:A1EPIB>2.0.ZU;2-6
Abstract
Photoluminescence (PL) of type III (high-purity wet synthetic) silica excited by a XeCl excimer laser (hnu = 4 eV) is reported. Time-resolve d spectra show that a PL band peaked at 1.9 eV can be induced by the X eCl laser irradiation. This band exhibits a fast rise time ( < 20 ns) but a decay time of several microseconds. The possible mechanisms of p hotogeneration and photoexcitation of the defects related to this emis sion are discussed.