GROWTH TEMPERATURE AND ANNEALING EFFECTS ON DEEP TRAPS OF IN0.52AI0.48AS GROWN BY MOLECULAR-BEAM EPITAXY

The effects of substrate temperature on the deep trap property of In0. 52Al0.48As layers grown by molecular beam epitaxy lattice matched on I nP substrates have been investigated. Deep level transient spectroscop y measurements have been used to characterize the InAlAs layers and an alyze the effects of growth kinetics on the deep traps in the epitaxia l layers. Two new deep traps have been found in the samples grown at r elatively low growth temperatures, which do not show in the samples gr own above 450-degrees-C. The activation energies of these traps are ob tained as DELTAE(T) = 0.45 +/- 0.03 and 0. 62 +/- 0.02 eV for EI1 and EI2, respectively. A measurable decrease in the densities of EI1 and E I2 was detected following the heat treatment at temperatures above 500 -degrees-C.