TECHNOLOGICAL ASPECTS CONCERNING THE REALIZATION OF ION-IMPLANTED SI-BOLOMETERS

Silicon bolometers obtained by P implantation on single crystal [100] substrates and compensated with boron in the range 10-50% have been ch aracterized from a technological point of view. Special emphasis was l aid on the doping profile of the thermistor, the most critical point o f the whole process for an optimal performance of the device as therma l detector. In particular, the effect of post implant anneal on the re covery of the radiation damage and on the modification of the as impla nted doping profile is reported. An anomalous enhanced diffusion at 92 0-degrees-C was observed in uncompensated samples. The effect of compe nsation with B is to reduce the P diffusion, thereby preserving the or iginal as implanted ''box'' profile almost in haltered. A reproducibil ity of +/-5% of the resistance vs. temperature R(T) characteristic of different bolometers at temperatures below 4.2K has been achieved. Thi s represents an important advancement in the realization of Si bolomet ers to be used as thermal detectors.