CHARGE TRAPPING EFFECTS IN CRYOGENIC PARTICLE DETECTORS MADE USING SINGLE-CRYSTAL SEMICONDUCTOR SUBSTRATES

We explore charge-trapping effects in cryogenic particle detectors com posed of single-crystal silicon substrates with both titanium transiti on-edge sensors (TES) and charge-collection electrodes deposited upon them. These effects include transients on various time scales which fo llow the evolution of different kinds of space charge, intrinsic gain and linearity shifts in signals characteristic of changes in the absor ption of energy carried by electrons and holes, variations in charge-c ollection efficiency and ionization resolution, etc.. The physics invo lved, relevant for many other cryogenic, semiconductor-based devices, includes a variety of charge trapping and transport mechanisms.