PHOTOLITHOGRAPHIC FABRICATION OF TUNNEL JUNCTION DETECTORS

The complex structure in present state of the art superconducting tunn el junction detectors requires photolithographic production of the det ector layout. With such a technique we achieve an edge definition bett er than 2 mum. Lift off processes proved to be beneficial in the fabri cation of high quality tunnel junctions. In addition we have investiga ted multilayer structures of insulators with backsloping edges. The co mbination of both techniques allows us to produce the tunnel junction within a single vacuum cycle.