SELECTIVE EXCITON FORMATION IN THIN GAAS ALXGA1-XAS QUANTUM-WELLS/

Authors
BLOM PWM VANHALL PJ SMIT C CUYPERS JP WOLTER JH
Citation
Pwm. Blom et al., SELECTIVE EXCITON FORMATION IN THIN GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review letters, 71(23), 1993, pp. 3878-3881
Citations number
26
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
23
Year of publication
1993
Pages
3878 - 3881
Database
ISI
SICI code
0031-9007(1993)71:23<3878:SEFITG>2.0.ZU;2-F
Abstract
We demonstrate experimentally that the exciton luminescence rise times in GaAs/AlxGa1-xAs quantum wells oscillate as a function of laser exc ess energy. We interpret these results as the occurrence of a selectiv e optical-phonon assisted exciton formation. Experiments on doped quan tum wells confirm our exciton formation model.