Films of Sb:SnO2 have been formed by vacuum e-beam evaporation. The st
ructural, electrical, and optical properties of these films have been
investigated with respect to annealing time and temperature. After hea
t treatment in an oxygen atmosphere, thin films with a peak transmitta
nce of 98% and 4-9 x 10(-3) OMEGAcm resistivity have been obtained. Th
e barrier heights and energy band diagrams of Sb:SnO2/Si n-n and p-n h
eterojunctions have been determined by C-V measurements.