INDIUM-TIN OXIDE THIN-FILMS BY METAL-ORGANIC DECOMPOSITION

In2O3-SnO2 films were produced by thermal decomposition of a deposit w hich was dip coated on borosilicate glass substrates from an acetylace tone solution of indium and tin acetoacetonate. Thermal analysis showe d complete pyrolysis of the organics by 400-degrees-C. The thermal dec omposition reaction generated acetylacetone gas and was found to be fi rst order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40-degrees-C/ min temperature ramp, the glass transition temperature of the deposite d oxide film was found to be approximately 462-degrees-C, and the film crystallization temperature was found to be approximately 518-degrees -C. For film fabrication, thermal decomposition of the films was perfo rmed at 500-degrees-C in air for 1 h followed by reduction for various times at 500-degrees-C in a reducing atmosphere. Crystalline films re sulted for these conditions. A resistivity of approximately 1.01 x 10( -3) OMEGA . cm, at 8 wt.% tin oxide with a transparency of approximate ly 95% at 400 nm, has been achieved for a 273 nm thick film.