OPTOELECTRONIC PROPERTIES MODULATED BY MEANS OF CHANGE IN LATTICE SITES OF IMPURITY IN LINBO3 CRYSTALS

Authors
FENG XQ
Citation
Xq. Feng, OPTOELECTRONIC PROPERTIES MODULATED BY MEANS OF CHANGE IN LATTICE SITES OF IMPURITY IN LINBO3 CRYSTALS, Chinese Physics Letters, 10(10), 1993, pp. 638-640
Citations number
8
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
10
Issue
10
Year of publication
1993
Pages
638 - 640
Database
ISI
SICI code
0256-307X(1993)10:10<638:OPMBMO>2.0.ZU;2-N
Abstract
This paper discusses the actual possibility of altering artificially c ertain optoelectronic properties of LiNbO3 crystals by means of change in lattice site of a few Me3+ ions in the crystals. A new lattice sit e Cr3+ defect in Cr-doped LiNbO3 vapour transport equilibration has be en displayed as a practical example.