PHONON-ELECTRON SCATTERING IN SINGLE-CRYSTAL SILICON-CARBIDE

Citation
Dt. Morelli et al., PHONON-ELECTRON SCATTERING IN SINGLE-CRYSTAL SILICON-CARBIDE, Applied physics letters, 63(23), 1993, pp. 3143-3145
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
23
Year of publication
1993
Pages
3143 - 3145
Database
ISI
SICI code
0003-6951(1993)63:23<3143:PSISS>2.0.ZU;2-Z
Abstract
We have measured the thermal conductivity kappa of Single crystals of hexagonal silicon carbide (6H-SiC) of two different electron densities n. The densities are low such that virtually all of the heat is condu cted by lattice vibrations. At low temperatures the thermal conductivi ty of both samples varies as T2 and scales with the electron density. The calculated phonon mean free path thus varies as T-1 and is consist ent with a model of scattering of the heat-carrying phonons by electro ns in an impurity band.