ELECTRIC-FIELD DEPENDENCE OF EXCITON SPIN RELAXATION IN GAAS ALGAAS QUANTUM-WELLS/

Authors
VINATTIERI A SHAH J DAMEN TC GOOSSEN KW PFEIFFER LN MAIALLE MZ SHAM LJ
Citation
A. Vinattieri et al., ELECTRIC-FIELD DEPENDENCE OF EXCITON SPIN RELAXATION IN GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 63(23), 1993, pp. 3164-3166
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
23
Year of publication
1993
Pages
3164 - 3166
Database
ISI
SICI code
0003-6951(1993)63:23<3164:EDOESR>2.0.ZU;2-6
Abstract
We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growt h direction and on the well thickness. The results show that exciton s pin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.