D. Tsoukalas et al., INVESTIGATION OF SILICON INTERSTITIAL REACTIONS WITH INSULATING FILMSUSING THE SILICON-WAFER BONDING TECHNIQUE, Applied physics letters, 63(23), 1993, pp. 3167-3169
The silicon wafer bonding technique of silicon implanted with oxygen (
SIMOX) wafers is used to investigate the silicon interstitial reaction
s with a thin thermal oxide layer formed on the surface of one of the
wafers before bonding. The silicon interstitials are generated by oxid
ation of the surface of selectively thinned bonded samples that form a
silicon on insulator structure on the top of a SIMOX wafer. By monito
ring the length of pregrown oxidation stacking faults we can calculate
the diffusivity of the silicon interstitials transport vehicle in the
thin oxide film for a temperature range widely used in silicon techno
logy.