MIXED ELEMENT TREES - A GENERALIZATION OF MODIFIED OCTREES FOR THE GENERATION OF MESHES FOR THE SIMULATION OF COMPLEX 3-D SEMICONDUCTOR-DEVICE STRUCTURES

Citation
N. Hitschfeld et al., MIXED ELEMENT TREES - A GENERALIZATION OF MODIFIED OCTREES FOR THE GENERATION OF MESHES FOR THE SIMULATION OF COMPLEX 3-D SEMICONDUCTOR-DEVICE STRUCTURES, IEEE transactions on computer-aided design of integrated circuits and systems, 12(11), 1993, pp. 1714-1725
Citations number
17
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Applications & Cybernetics
ISSN journal
02780070
Volume
12
Issue
11
Year of publication
1993
Pages
1714 - 1725
Database
ISI
SICI code
0278-0070(1993)12:11<1714:MET-AG>2.0.ZU;2-7
Abstract
This paper addresses the problem of the allocation of spatial grids fo r complex nonplanar three-dimensional (3-D) semiconductor device struc tures. We have characterized the class of meshes suitable for the inte gration of the device equations with the usual numerical schemes as be ing a subclass of the class of Delaunay meshes. We propose an algorith m for the efficient generation of such admissible meshes based on the iterative refinement of coarse elements. The generated meshes permit a n exact geometrical modeling of rather general domain boundaries of mo dern silicon devices avoiding the ''obtuse angle problem'' by construc tion.