QUASI-3-DIMENSIONAL MODELING OF BIPOLAR-TRANSISTOR CHARACTERISTICS

Authors
SADOVNIKOV A ROULSTON DJ
Citation
A. Sadovnikov et Dj. Roulston, QUASI-3-DIMENSIONAL MODELING OF BIPOLAR-TRANSISTOR CHARACTERISTICS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(11), 1993, pp. 1742-1748
Citations number
6
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Applications & Cybernetics
Journal title
IEEE transactions on computer-aided design of integrated circuits and systems → ACNP
ISSN journal
02780070
Volume
12
Issue
11
Year of publication
1993
Pages
1742 - 1748
Database
ISI
SICI code
0278-0070(1993)12:11<1742:QMOBC>2.0.ZU;2-H
Abstract
A new approach to modeling the characteristics of a real three-dimensi onal bipolar transistor (BJT) is presented. It is based on the joint u se of the BIPOLE program [1] for calculating the intrinsic and emitter sidewall BJT characteristics and a special code RBCALC for calculatin g the two-dimensional potential distribution in the base region. The r esults presented show the importance of accounting for the third dimen sion for accurate calculation of some important BJT characteristics.