A COMPLETE SUBSTRATE CURRENT MODEL INCLUDING BAND-TO-BAND TUNNELING CURRENT FOR CIRCUIT SIMULATION

A simple and accurate substrate current model thal is valid in the who le operation region of MOSFET with various dimensions is presented. Th e theory is based on hot-carrier induced impact ionization and band-to -band tunneling (BTBT). All the parameters in the model can be assigne d proper physical meanings and are easily extracted from the measureme nt data. The model is incorporated in our internally developed circuit simulator Mitsubishi Circuit Simulator (MICS). Both the accuracy and the efficiency of the model is shown by experiment and simulation, and hence, makes the simulator useful for designers who care about low po wer application.