The photodepletion and reaction dynamics of O atoms isolated in xenon
matrices have been studied. Oxygen atoms are generated by 193 nm photo
lysis of a N2O dopant and monitored via the laser-induced fluorescence
of XeO exciplexes produced by the 248 nm excitation of Xe/O pairs. Di
ssociative relaxation of XeO exciplexes generates energetic O atoms wh
ich may travel significant distances in the matrix. This photoinduced
mobility can lead to O atom loss. The O atom loss process is found to
be bimolecular from 15 to 42 K at all fluences studied and is ascribed
to an O+O recombination process. Higher temperature data (42 K) may e
xhibit behavior characteristic of a transition from second order to fi
rst order kinetics. A kinetic scheme is derived which can be used to m
odel the data and infer a microscopic description of the O atom dynami
cs.