PHOTOABSORPTION SPECTRA OF NANO-CRYSTALLINE SILICON FILMS

The photoabsorption spectra of nano-crystalline silicon (nc-Si:H) film s were measured by means of constant photoconductivity method. We inve stigated the changes of absorption spectra with the increasing of crys tallinity as the deposited films are amorphous, microcrystalline and n ano-crystalline. We found that in nc-Si: H the transition processess i n the interfacial region between the grains predominate the whole rang e of the absorption spectra. We related the phenomenon to the structur al changes in the material.