ENHANCEMENT OF BAND-EDGE LUMINESCENCE IN HYDROGENATED STRAINED SI(0.84)GE(0.16) SI QUANTUM-WELLS BY PHOTOCHEMICAL VAPOR-DEPOSITION/

Well-resolved band-edge luminescence spectra are reported for strained Si0.84Ge0.16/Si quantum wells grown by ultrahigh-vacuum chemical-vapo r-deposition at 550-degrees-C. Phonon assisted transitions are also ob served and the phonon structure of the spectrum is resolved. Blue shif ting of the peak emission with decreasing well width is found in good agreement with theoretical calculations. The effects of hydrogenation using photochemical vapor deposition system are studied and an enhance ment of the band edge luminescence intensity by a factor of three acco mpanied with a decrease in the intensity of the peaks coming from latt ice defects is observed after hydrogenation. These results indicate th at photochemical vapor deposition system is a useful tool for injectin g atomic hydrogen into Si1-xGex/Si quantum wells and to enhance the ba nd edge luminescence as well as to passivate the activity of the defec ts.