Within our present knowledge of the behaviour of the MOS transistors o
n Silicon, it seems that they can be operated with dimensions well bel
ow 0.1 mum. The photolithography tools will probably be usable close t
o 0.1 mum. So, large technical perspectives are still opened to the de
velopment of the VLSI. However, to take profit of such small geometrie
s, enormous progresses are required for the process quality; they expl
ain the dramatic increase of the investments which are necessary in th
is domain. Economic factors become then of prime importance; they will
control the progress rate in the future. Fortunately, the demand, for
portable systems and for image treatment and transport in particular,
will constitute strong technology drivers in the next ten years; so o
ne can expect that the VLSI will continue to progress at a rapid rate.
Afterwards, the extrapolation of the economic terms suggest that some
change, either qualitative or quantitative, must occur in 10-15 years
range from now.