ENHANCEMENT OF HYDROGEN DIFFUSION IN A-SI-H THROUGH INTENSE ILLUMINATION

Authors
GREIM O WEBER J TANG XM BAER Y KROLL U
Citation
O. Greim et al., ENHANCEMENT OF HYDROGEN DIFFUSION IN A-SI-H THROUGH INTENSE ILLUMINATION, Solid state communications, 88(8), 1993, pp. 583-585
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
88
Issue
8
Year of publication
1993
Pages
583 - 585
Database
ISI
SICI code
0038-1098(1993)88:8<583:EOHDIA>2.0.ZU;2-P
Abstract
Hydrogenated amorphous Silicon (a-Si:H) films have been thermally anne aled at temperatures in the range 220 degrees C to 270 degrees C for 4 8 hours, either under intense visible light illumination (15 watts/cm( 2)) or in the dark. After each annealing, the hydrogen concentration p rofile was measured with RBS-ERDA ion beam analysis methods. Substanti al enhancement of the hydrogen diffusion constant D was observed in th e illuminated samples. To our knowledge, this is the first observation of this effect directly in a-Si:H films. Our results are in agreement with others obtained with a-Si:H/a-Si:D/a-Si:H sandwiches by SIMS (Se condary Ion Mass Spectroscopy).