THE HALL-EFFECT IN W-CU AMORPHOUS-ALLOYS

Citation
J. Ivkov et al., THE HALL-EFFECT IN W-CU AMORPHOUS-ALLOYS, Solid state communications, 88(8), 1993, pp. 633-636
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
88
Issue
8
Year of publication
1993
Pages
633 - 636
Database
ISI
SICI code
0038-1098(1993)88:8<633:THIWA>2.0.ZU;2-W
Abstract
Measurements of the Hall coefficient, the electrical resistivity and t he room temperature coefficient of resistivity of the amorphous W1-xCu x alloys (0.4 < x < 0.7) are reported. The alloys have been prepared b y magnetron sputtering technique. The Hall coefficient, R(H) exhibits a sign reversal at an approximate tungsten concentration of 45% being positive on the tungsten-rich side. The obtained results are correlate d with the available data for the corresponding properties of the othe r amorphous alloys based on early transition-late transition metals. T he Hall effect results support the ''magnetic'' origin of positive R(H ) and indicate that the spin-orbit coupling (lambda(so)) in W-Cu alloy s is weaker than in corresponding Zr, Ti or Ta base alloys.