An rf-SQUID has been fabricated on Hg0.8Tl0.2Ba2Ca2Cu3O8+delta thin fi
lm using natural grain boundary weak links. The film was prepared by t
he spray pyrolysis technique and had T-c = 123 K. Voltage-flux modulat
ion of the SQUID has been observed up to 117.5 K. The flux noise densi
ty, root S-phi of the rf-SQUID is approximate to 2.5 X 10(-3)Phi(0)/ro
ot Hz at 1 Hz and 77 K. The value of root S-phi remains almost the sam
e when the operating temperature is increased from 77 to 112 K, and it
s value becomes approximate to 4 x 10(-3)Phi(0)/root Hz at 114 K.