HG(TL)-BA-CA-CU-O HIGH-T-C THIN-FILM RF-SQUID OPERATING ABOVE 115 K

Citation
N. Khare et al., HG(TL)-BA-CA-CU-O HIGH-T-C THIN-FILM RF-SQUID OPERATING ABOVE 115 K, Physica. C, Superconductivity, 274(1-2), 1997, pp. 161-164
Citations number
12
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
274
Issue
1-2
Year of publication
1997
Pages
161 - 164
Database
ISI
SICI code
0921-4534(1997)274:1-2<161:HHTROA>2.0.ZU;2-P
Abstract
An rf-SQUID has been fabricated on Hg0.8Tl0.2Ba2Ca2Cu3O8+delta thin fi lm using natural grain boundary weak links. The film was prepared by t he spray pyrolysis technique and had T-c = 123 K. Voltage-flux modulat ion of the SQUID has been observed up to 117.5 K. The flux noise densi ty, root S-phi of the rf-SQUID is approximate to 2.5 X 10(-3)Phi(0)/ro ot Hz at 1 Hz and 77 K. The value of root S-phi remains almost the sam e when the operating temperature is increased from 77 to 112 K, and it s value becomes approximate to 4 x 10(-3)Phi(0)/root Hz at 114 K.