RESONANT-TUNNELING EFFECT OF QUANTUM WELL-SUPERCONDUCTOR JUNCTION

Authors
MA GC LIU Y DAI XX
Citation
Gc. Ma et al., RESONANT-TUNNELING EFFECT OF QUANTUM WELL-SUPERCONDUCTOR JUNCTION, Physica. C, Superconductivity, 274(1-2), 1997, pp. 173-179
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
274
Issue
1-2
Year of publication
1997
Pages
173 - 179
Database
ISI
SICI code
0921-4534(1997)274:1-2<173:REOQWJ>2.0.ZU;2-T
Abstract
In this paper a semiconductor double barrier-quantum well-superconduct or (DBQS) junction is proposed and the I-V characteristics was obtaine d by employing a generalized Giaever formula and Andreev reflection me thod. The result shows that the I-V curve of DBQS junction exhibits ne gative differential resistance. It is suggested that this effect can b e used to fabricate a new electronic device.