CHEMICAL-VAPOR-DEPOSITION OF SILICON DOPE D IN-SITU WITH PHOSPHORUS .1. EXPERIMENTAL-STUDY

The fabrication of silicon layers doped in situ with phosphor using CV D technique is still poorly controlled by the microelectronics industr y. Significant thickness heterogeneities are noticeable on circuit and load, which greatly limits the process utilization. An experimental s tudy of this deposition was carried out. The influence of many paramet ers (temperature, pressure, feed composition) was studied in terms of deposition thickness and uniformity as well as crystalline structure a nd resistivity. The advantages and involved mechanisms are presented.