ELECTROLUMINESCENCE FROM LATERAL P-N-JUNCTIONS GROWN ON (111)A GAAS PATTERNED SUBSTRATES

Lateral p-n junctions were grown on (111)A GaAs patterned substrates b y a plane selective doping method and electroluminescence (EL) propert ies of the lateral p-n junctions were investigated. EL was observed al ong the [011] line, and the line formed a triangular pattern on the su bstrate. The emission spectrum had a sharp peak at 870 nm at room temp erature. Even though these p-n junctions were not optimized for LED st ructures, the emission intensity of EL was higher than that from p-n j unctions of conventional structure. These characteristics are advantag es of lateral p-n junctions grown on (111)A GaAs patterned substrates. These are the first observations of EL from (111)A GaAs lateral p-n j unctions.