ACCEPTOR CONCENTRATION CONTROL OF P-ZNSE USING NITROGEN AND HELIUM MIXED-GAS PLASMA

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using th e mixed gas, the acceptor concentration can be controlled from 6 x 10( 16) to 7 x 10(17) CM-3 while films doped using the nitrogen plasma exh ibited the acceptor concentration of 3 x 10(17) CM-3. Doping character istics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with th is technique were used for blue-green laser structures. Lasing was obs erved at 77 K under pulse operation.