CAVITY PARAMETERS OF ZNCDSE ZNSE SINGLE-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASER-DIODES/

The cavity length dependence of the external differential quantum effi ciency and the threshold current density was investigated for ZnCdSe/Z nSe single-quantum-well separate-confinement-heterostructure laser dio des at 77 K. An internal loss of 1.5 cm-1, an internal quantum efficie ncy of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2.mum) and a gain factor of 0.36 cm2.mum/A were obtained. Th e transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous e mission will lead to reduction of the operation current.