GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2-MU-M

Authors
CHOI HK WALPOLE JN TURNER GW EGLASH SJ MISSAGGIA LJ CONNORS MK
Citation
Hk. Choi et al., GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2-MU-M, IEEE photonics technology letters, 5(10), 1993, pp. 1117-1119
Citations number
14
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
10
Year of publication
1993
Pages
1117 - 1119
Database
ISI
SICI code
1041-1135(1993)5:10<1117:GTLEA2>2.0.ZU;2-5
Abstract
Tapered oscillators fabricated from a GaInAsSb-AlGaAsSb quantum-well s tructure are reported for the first time. The quantum-well laser struc ture, grown by molecular beam epitaxy, has broad-stripe pulsed thresho ld current densities as low as 330 A/cm2 at room temperature. One tape red laser emitting at 2.02 mum has exhibited continuous wave (CW) outp ut power up to 750 mW, with power in the near-diffraction-limited cent ral lobe as high as 200 mW.