Gl. Bona et al., (AL)GAINP LASER WITH LATERAL CONFINEMENT BY EPITAXIAL-GROWTH ON NONPLANAR SUBSTRATES, IEEE photonics technology letters, 5(10), 1993, pp. 1125-1128
Quantum-Well (Al)GaInP stripe lasers with lateral current and carrier
confinement have been fabricated making use of the disordering of the
natural superlattice at sidewalls with shallow angles during epitaxial
growth on (001) GaAs substrates patterned with ridges and trenches. E
xcellent device quality is obtained if the substrates are patterned wi
th ridges. With a stripe width of 5 mum required for fundamental trans
versal mode operation, the threshold current density of these devices
is one-half that of conventional planar stripe lasers owing to improve
d current confinement.