POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH 2-STEP ANNEALING PROCESS

Authors
BONNEL M DUHAMEL N HAJI L LOISEL B STOEMENOS J
Citation
M. Bonnel et al., POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH 2-STEP ANNEALING PROCESS, IEEE electron device letters, 14(12), 1993, pp. 551-553
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
12
Year of publication
1993
Pages
551 - 553
Database
ISI
SICI code
0741-3106(1993)14:12<551:PSTTW2>2.0.ZU;2-A
Abstract
Thin film transistors (TFT's) were fabricated from poly-Si crystallize d by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid therm al annealing leads to a significant improvement in the material qualit y. The TFT's measured with this two-step annealing material exhibit be tter characteristics than those obtained by using conventional furnace annealing.