ROUGHENING OF STEPS DURING HOMOEPITAXIAL GROWTH ON SI(001)

Authors
WU F JALOVIAR SG SAVAGE DE LAGALLY MG
Citation
F. Wu et al., ROUGHENING OF STEPS DURING HOMOEPITAXIAL GROWTH ON SI(001), Physical review letters, 71(25), 1993, pp. 4190-4193
Citations number
30
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
25
Year of publication
1993
Pages
4190 - 4193
Database
ISI
SICI code
0031-9007(1993)71:25<4190:ROSDHG>2.0.ZU;2-0
Abstract
The two-dimensional kinetic roughening of steps on vicinal Si(001) has been analyzed with scanning tunneling microscopy for growth at differ ent rates, doses, and temperatures. Growth exponents for the evolution of the step roughness are extracted. They suggest extremely ineffecti ve relaxation mechanisms for the rough step.