ENHANCEMENT OF ADHESION IN ION-BEAM-MIXED CU SIO2 SYSTEMS/

A thin Cu layer (35 nm) deposited on SiO2 has been mixed with 80-keV A r+ at room temperature, 550 K, and 650 K. Interfacial properties of th e irradiated samples were investigated with Rutherford backscattering spectroscopy (RBS), grazing angle X-ray diffraction (GXRD), and X-ray photo-electron spectroscopy (XPS), and by using a scratch tester. Adhe sion of the Cu film was improved by a factor of 3 and at a dose of 1.5 X 10(16) Ar+/cm2 by ion-beam mixing at room temperature, while high-t emperature ion-beam mixing enhanced the adhesion by a factor of 5. Bal listic mixing plays a role in improving the adhesion for room-temperat ure ion-mixing, and creation of the Cu2O phase induced by ion-beam mix ing contributes to the enhancement of the adhesion at high temperature .