MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD

Authors
BERTOLOTTI M LIAKHOU G LIVOTI R WANG RP SIBILIA C YAKOVLEV VP
Citation
M. Bertolotti et al., MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD, Journal of applied physics, 74(12), 1993, pp. 7054-7060
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
12
Year of publication
1993
Pages
7054 - 7060
Database
ISI
SICI code
0021-8979(1993)74:12<7054:MTOASD>2.0.ZU;2-H
Abstract
The mirror temperature response of a diode laser to injection current is studied through the photodeflection method. A theoretical model is presented together with some experimental measurements. Theoretical re sults are compared with experimental measurements for an AlGaAs quantu m well laser diode.