MEASUREMENT OF THE ELECTRONIC TRANSFER PROCESS IN NITRIDE FILM ON A SILICON SUBSTRATE VIA PHOTOCONDUCTANCE DECAY

A temperature-controlled laser-microwave photoconductance lifetime mea surement technique combined with ultraviolet irradiation is used to in vestigate the electronic transfer process at charge trapping sites, th e K centers, in low pressure chemical vapor deposited nitride film on a silicon substrate in the temperature range 300-500 K. A relationship between the lifetime and the space charge in the dielectric film is d iscussed in order to correlate the lifetime data with electronic trans fer process on K centers. An isothermal transfer process is then found following a stretched exponential function of annealing time with a t emperature-independent stretched factor around 0.14 and a time constan t characteristic of activation energy around 0.81 eV.