L. Zhong et al., MEASUREMENT OF THE ELECTRONIC TRANSFER PROCESS IN NITRIDE FILM ON A SILICON SUBSTRATE VIA PHOTOCONDUCTANCE DECAY, Journal of applied physics, 74(12), 1993, pp. 7311-7314
A temperature-controlled laser-microwave photoconductance lifetime mea
surement technique combined with ultraviolet irradiation is used to in
vestigate the electronic transfer process at charge trapping sites, th
e K centers, in low pressure chemical vapor deposited nitride film on
a silicon substrate in the temperature range 300-500 K. A relationship
between the lifetime and the space charge in the dielectric film is d
iscussed in order to correlate the lifetime data with electronic trans
fer process on K centers. An isothermal transfer process is then found
following a stretched exponential function of annealing time with a t
emperature-independent stretched factor around 0.14 and a time constan
t characteristic of activation energy around 0.81 eV.