Dg. Austing et al., CAPACITANCE STUDIES OF CHARGE REDISTRIBUTION BETWEEN GAMMA-STATE AND X-STATE IN A GAAS ALAS DOUBLE-BARRIER STRUCTURE AT HIGH-PRESSURE/, Journal of applied physics, 74(12), 1993, pp. 7340-7343
Capacitance measurements as a function of bias provide evidence for th
e redistribution of electrons above the pressure induced type I to typ
e II transition in a 43, 72, and 40 angstrom AlAs/GaAs double barrier
structure (DBS). Measurements at 77 K for pressures up to 16 kbar allo
w the identification of low and high pressure regimes. In the low pres
sure regime the DBS exhibits a capacitance whose characteristic length
includes both the barriers and the well, and any surrounding depletio
n regions. In the high pressure regime, the behavior is like that of a
''quantum capacitor,'' with plates only approximately 70 angstrom apa
rt. This causes a marked increase in the zero bias capacitance, which
is explained by electron transfer to the X wells in the AlAs regions.
The subsequent variation of the capacitance with bias is consistent wi
th a band bending model introduced previously, in which the Fermi leve
l is pinned to the lowest X level in each well at low bias, but where
the collector well is eventually depleted at larger bias.