PROCESS-PROPERTY CORRELATIONS OF EXCIMER-LASER ABLATED BISMUTH TITANATE FILMS ON SILICON

Bismuth titanate thin films were deposited by the excimer laser ablati on technique directly onto bare silicon substrates, SiO2 and Si3N4 coa ted silicon. The impact of process parameters such as gas pressure, la ser fluence, processing temperature, and the presence of an oxygen pla sma were studied with regards to the ferroelectric-semiconductor inter face. The density of interfacial surface state (N(ss)) at the flatband voltage was found to be on the order of 10(12)-10(14) eV-1 cm-2. Hyst eretic capacitance-voltage data indicated charge injection from the su bstrate was the dominant mechanism, masking any polarization mode. Fil ms deposited on SiO2 coated silicon did, however, exhibit polarization type switching.