THE TEMPERATURE CHARACTERISTICS OF INGAASP INP BURIED HETEROSTRUCTURELASERS/

Authors
GAULT M MAWBY P ADAMS AR TOWERS M
Citation
M. Gault et al., THE TEMPERATURE CHARACTERISTICS OF INGAASP INP BURIED HETEROSTRUCTURELASERS/, Journal of applied physics, 74(12), 1993, pp. 7621-7623
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
12
Year of publication
1993
Pages
7621 - 7623
Database
ISI
SICI code
0021-8979(1993)74:12<7621:TTCOII>2.0.ZU;2-I
Abstract
The temperature characteristics of 1.3 mum InGaAsP/InP buried heteroju nction lasers are investigated using a fully self-consistent two dimen sional numerical model. Devices operating at 1.3 mum are very temperat ure sensitive and therefore the model includes for the first time coup led solutions to the thermal as well as the electrical and optical equ ation sets. Good agreement is found with experimental results, includi ng the temperature dependence of the threshold current and the predict ion of a break-point temperature.