INDUCED IR EMISSION IN SILICON WITH HEAVILY-DOPED DIFFUSED QUANTUM-WELL PROFILES

Authors
BAGRAEV NT KLYACHKIN LE CHAIKINA EI
Citation
Nt. Bagraev et al., INDUCED IR EMISSION IN SILICON WITH HEAVILY-DOPED DIFFUSED QUANTUM-WELL PROFILES, JETP letters, 58(8), 1993, pp. 598-602
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
58
Issue
8
Year of publication
1993
Pages
598 - 602
Database
ISI
SICI code
0021-3640(1993)58:8<598:IIEISW>2.0.ZU;2-M
Abstract
Experiments reveal an intense IR emission induced by an external elect ric field in silicon containing heavily doped diffused quantum-well pr ofiles. This emission is explained in a model of a 2D excitonic insula tor.