INTEGRATED PHOTOCAPACITIVE POSITION-SENSITIVE DETECTOR MADE IN CMOS TECHNOLOGY

Authors
SCHMIDT WD AHLERS H HELMIG V BOHRISCH R BOLDT J
Citation
Wd. Schmidt et al., INTEGRATED PHOTOCAPACITIVE POSITION-SENSITIVE DETECTOR MADE IN CMOS TECHNOLOGY, Sensors and actuators. A, Physical, 39(2), 1993, pp. 117-124
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
39
Issue
2
Year of publication
1993
Pages
117 - 124
Database
ISI
SICI code
0924-4247(1993)39:2<117:IPPDMI>2.0.ZU;2-E
Abstract
An integrated photocapacitive edge-detector consisting of a circle-cir cular ring device and two charge-balancing converters is described. Th e integrated sensors are produced using a conventional 1.5 mu m CMOS t echnology. The theoretical background and design as well as the operat ion are explained. Experimental results of optical edge-detection show an accuracy of position detection of the centre of the sensor structu re of about 2 mu m.