The growth of the chemical conversion coatings on aluminium is strongl
y dependent upon the purity of the metal. For specimens up to 99.99% p
urity, the aluminium surface is not homogeneous. Flaws are always pres
ent in the thin oxide layer covering the aluminium surface; such flaws
are sited above the grain boundaries and cellular boundaries associat
ed with impurity segregation in the aluminium substrate. These flaws a
re of the residual type and provide easy paths for electronic conducti
on in an otherwise insulating oxide layer. Consequently, coating growt
h (i.e. the reduction of the dichromate species to hydrated chromium o
xide) occurs preferentially along the grain boundaries or cellular bou
ndaries of the aluminium substrate. However, for aluminium specimens o
f 99.9996% purity or higher, where the cellular structure is absent, t
he population density of the residual-type flaws in the oxide layer is
considerably reduced. Consequently, coating growth proceeds by the tu
nnelling of electrons through the thin, insulating, passive oxide laye
r to produce a coating of more uniform appearance than associated with
substrates of reduced purity.