INVESTIGATION OF REOXIDATION AND PHOSPHORUS BEHAVIOR IN HF-TREATED HEAVILY-DOPED SILICON SURFACES

The thermally stimulated desorption (TSD) from aqueous HF-treated heav ily phosphorus-doped Si(100) and polycrystalline Si surfaces was studi ed by Auger electron spectroscopy (AES), electron energy loss spectros copy (EELS) and mass spectroscopy. Desorption analyses indicated that reoxidation takes place slightly, to the same extent in the doped Si(1 00) and polycrystalline Si surfaces owing to hydrogen desorption. More over, a large quantity of phosphorus segregates to the top few layers in the desorption process of the oxides. It was clarified that the HF- treated polycrystalline silicon surface is terminated by hydrogen and resists oxidation similarly to a single-crystal one.