MONTE-CARLO SIMULATION OF SURFACE-REACTIONS IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS

Authors
SHIRAFUJI T CHEN WM YAMAMUKA M TACHIBANA K
Citation
T. Shirafuji et al., MONTE-CARLO SIMULATION OF SURFACE-REACTIONS IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS, JPN J A P 1, 32(11A), 1993, pp. 4946-4947
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Issue
11A
Year of publication
1993
Pages
4946 - 4947
Database
ISI
SICI code
Abstract
A three-dimensional Monte-Carlo simulation of surface reactions in pla sma-enhanced chemical vapor deposition of hydrogenated amorphous silic on thin films has been carried out. The increase of Si-H-2 bonds in th e films with increase of SiH2 radical density was explained naturally in terms of surface roughness caused by high sticking probability of S iH2. The effective roughness monitored as voids by in situ ellipsometr y supports the simulated results.