LOW-RESISTANCE NIAUGE AU OHMIC CONTACTS ON N-TYPE (111)A GAAS/

Authors
LOVELL DR TAKEBE T YAMAMOTO T INAI M KOBAYASHI K WATANABE T
Citation
Dr. Lovell et al., LOW-RESISTANCE NIAUGE AU OHMIC CONTACTS ON N-TYPE (111)A GAAS/, JPN J A P 1, 32(11A), 1993, pp. 4948-4949
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Issue
11A
Year of publication
1993
Pages
4948 - 4949
Database
ISI
SICI code
Abstract
The resistance of NiAuGe/Au ohmic contacts on n-type GaAs, grown by mo lecular beam epitaxy, on (111)A GaAs substrates which are misoriented by 5-degrees toward [100] has been studied. The ohmic contacts were fo rmed by simultaneously evaporating Ni and a eutectic alloy of AuGe and then evaporating a layer of Au. The contacts were alloyed at 450-degr ees-C. Contact resistances (R(c)) from 0.035 OMEGA . mm to 0.056 OMEGA -mm are observed.